IKP40N65H5XKSA1, БТИЗ транзистор, 40 А, 1.65 В, 255 Вт

495,00 ₽

Артикул: ed7770fcdccd Категория:

      Описание

      IKP40N65H5XKSA1, БТИЗ транзистор, 40 А, 1.65 В, 255 Вт The IKP40N65H5 is a High Speed IGBT in TRENCHSTOP™ 5 technology co-packed with RAPID 1 fast and soft anti-parallel diode. The TRENCHSTOP™ 5 IGBT technology redefines best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow. It features best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability.

      • Factor 2.5 lower Qg
      • Factor 2 reduction in switching losses
      • Low COES/EOSS
      • Mild positive temperature coefficient VCE (sat)
      • Temperature stability of Vf
      • Higher power density design
      • 200mV Reduction in VCE (sat)
      • 50V Increase in the bus voltage possible without compromising reliability
      • Green product
      • Halogen-free

      Полупроводники — ДискретныеТранзисторыБТИЗ Одиночные

      Детали
      Бренд

      Infineon Technologies
      Максимальная Рабочая Температура

      175 C
      Количество Выводов

      3вывод(-ов)
      Напряжение Коллектор-Эмиттер

      650В
      Стандарт Корпуса Транзистора

      to-220
      Рассеиваемая Мощность

      255Вт
      DC Ток Коллектора

      40А
      Наименование

      IKP40N65H5XKSA1, БТИЗ транзистор, 40 А, 1.65 В, 255 Вт, 650 В, TO-220, 3 вывод(-ов)